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| automotive grade features advanced planar technology low on-resistance dual n and p channel mosfet dynamic dv/dt rating 150c operating temperature fast switching full avalanche rated repetitive avalanche allowed up totjmax lead-free, rohs compliant automotive qualified* logic level gate drive descriptionspecifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit com- bined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. so-8 AUIRF9952Q absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ n-ch p-ch v (br)dss 30v -30v r ds(on) max. 0.10 ? 0.25 ? i d 3.5a -2.3a d1 n-channel mosfet p-channel mosfet d1 d 2 d2 g1s2 g2 s1 top view 8 12 3 4 5 6 7 parameter units n-channel p-channel i d @ t a = 25c 10 sec. pulsed drain current, v gs @ 10v 3.5 -2.3 i d @ t a = 70c continuous drain current, v gs @ 10v 2.8 -1.8 i dm pulsed drain current 16 -10 p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy 44 57 mj i ar avalanche current 2.0 -1.3 a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt 5.0 -5.0 v/ns t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient (pcb mount, steady state) CCC 62.5 c/w w a c -55 to + 150 1.3 0.25 max. 2.0 0.016 20 base part number package type standard pack orderable part number form quantity AUIRF9952Q so-8 tube 95 AUIRF9952Q tape and reel 4000 AUIRF9952Qtr ! downloaded from: http:/// ! !"# $ %!!"$&#' ' # ( %)!*+ ,% "#$ -."$&#' ' # ( %)!*+ ( / )*+#0/ 1 / ) ? #2 / !" 3 % ( / )*+#0/451 / ) ? #2 /,% " 6 !!& 7 3,. # %! static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units n-ch 30 CCC CCC v p-ch -30 CCC CCC n-ch CCC 0.015 CCC v/c p-ch CCC 0.015 CCC CCC 0.08 0.10 CCC 0.12 0.15 CCC 0.165 0.250 CCC 0.290 0.400 n-ch 1.0 CCC 3.0 v p-ch -1.0 CCC -3.0 n-ch CCC12CCC s p-ch CCC 2.4 CCC n-ch CCC CCC 2.0 p-ch CCC CCC -2.0 n-ch CCC CCC 25 p-ch CCC CCC -25 i gss gate-to-source forward leakage n-p CCC CCC -100 gate-to-source reverse leakage n-p CCC CCC 100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units n-ch CCC 6.9 14 p-ch CCC 6.1 12 n-ch CCC 1.0 2.0 p-ch CCC 1.7 3.4 n-ch CCC 1.8 3.5 n-ch CCC 1.1 2.2 p-ch CCC 6.2 12 n-ch CCC 9.7 19 p-ch CCC 8.8 18 n-ch CCC 14 28 n-ch CCC 13 26 p-ch CCC 20 40 n-ch CCC 3.0 6.0 p-ch CCC 6.9 14 n-ch CCC 190 CCC p-ch CCC 190 CCC v gs = 0v, v ds = 15v, ? = 1.0mhz n-ch CCC 120 CCC p-ch CCC 110 CCC n-ch CCC61CCC v gs = 0v, v ds = -15v, ? = 1.0mhz p-chCCC54CCC diode characteristics parameter min. typ. max. units n-ch CCC 0.82 1.2 v p-ch CCC -0.82 -1.2 n-ch CCC 27 53 ns n-channel p-ch CCC 27 54 t j = 25c,i f =1.25a, di/dt = 100a/s n-ch CCC 28 57 nc p-channel p-ch CCC 31 62 t j = 25c,i f =-1.25a, di/dt = 100a/s t on forward turn-on time n-p intrinsic turn-on time is negligible (turn-on i s dominated by ls+ld) input capacitance c oss output capacitance i d = 1.8a, v ds = 10v, v gs = 10v p-channel v dd = 10v, i d = 1.0a r g = 6.0 ? v dd =-10v, i d =-1.0a r g = 6.0 ? i d =-2.3a, v ds =-10v, v gs =-10v n-channel r d = 10 ? p-channel t d(off) turn-off delay time t f fall time t d(on) turn-on delay time t r rise time q gs gate-to-source charge q gd gate-to-drain ("miller") charge v ds = v gs , i d = -250a v ds = -15v, i d = -2.3a v ds = -24v, v gs = 0v v ds = -24v, v gs = 0v, t j = 125c i dss drain-to-source leakage current q g total gate charge v gs(th) gate threshold voltage forward transconductance gfs v ds = v gs , i d = 250a v (br)dss drain-to-source breakdown voltage ? v (br)dss / ? t j breakdown voltage temp. coefficient r ds(on) static drain-to-source on-resistance v gs = 0v, i d =-250a reference to 25c, i d = -1ma n-ch conditions v ds = 15v, i d = 3.5a n-channel v gs = 20v ? v gs = -10v, i d = -1.0a p-ch v gs = 4.5v, i d = 1.0a v gs = -4.5v, i d = -0.5a conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 2.2a t j = 25c, i s = 1.25a, v gs = 0v conditions a v ds = 24v, v gs = 0v v ds = 24v, v gs = 0v, t j = 125c v gs = -20v CCC CCC 1.7 na a pf ns nc i s continuous source current (body diode) r d = 10 ? n-channel CCC CCC c rss reverse transfer capacitance p-channel c iss n-ch p-ch -1.3 CCC CCC CCC CCC 16 v sd diode forward voltage i sm pulsed source current (body diode) p-ch n-ch 16 t j = 25c, i s = -1.25a, v gs = 0v t rr reverse recovery time q rr reverse recovery charge downloaded from: http:/// ! " #$% # & #$% '% & #$% '% & #$% ( )* 1 10 100 0.1 1 10 20s pulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 1 10 100 0.1 1 10 a ds v , drain-to-source voltage (v) d i , drain-to-source current (a) 20s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a 1 10 100 3.0 3.5 4.0 4.5 5.0 5.5 6.0 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 10v 20s pulse width ds downloaded from: http:/// ! + , '( ) # % - ./ 0*$ ) & #$% '( ) & #$% '( ) 1 )* -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 2.2a 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 03691 21 5 a i = 3.5a d gs v , gate-to-source voltage (v) #8 ,, 9 ? 0 20 40 60 80 100 25 50 75 100 125 150 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) itop 0.89a 1.6a bottom 2.0a d 0.04 0.06 0.08 0.10 0.12 0 2 4 6 8 10 12 a i , drain current (a) d v = 10v gs v = 4.5v gs #8 ,, 9 ? downloaded from: http:/// ! - 0/ # # % ! 2 ((. #$% 1 &* ) 1(( )* #$% &% ) (( )* 0 50 100 150 200 250 300 350 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 1.8a v = 10v ds 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response) downloaded from: http:/// ! 3 #$% # & #$% '% & #$% '% & #$% ( )* 0.1 1 10 100 0.1 1 10 d ds 20s pulse width t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 0.1 1 10 100 0.1 1 10 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 20s pulse width t = 150c j 0.1 1 10 100 3.0 4.0 5.0 6.0 7.0 8.0 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -10v 20s pulse width ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) downloaded from: http:/// ! 4 + , '( ) # % - ./ 0*$ ) & #$% '( ) & #$% '( ) 1 )* -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -1.0a 0.0 0.5 1.0 1.5 2.0 2.5 0.0 1.0 2.0 3.0 4.0 5.0 a -i , drain current (a) d v = -10v v = -4.5v gs gs 0.00 0.20 0.40 0.60 0.80 0 3 6 9 12 15 a gs i = -2.3a d -v , gate-to-source voltage (v) #8 ,, 9 ? #8 ,, 9 ? 25 50 75 100 125 150 0 30 60 90 120 150 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -0.58a -1.0a -1.3a downloaded from: http:/// ! 5 #$% 1 &* ) 1(( )* #$% &% ) (( )* 0 100 200 300 400 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -2.3a v = -10v ds - 0/ # # % ! 2 ((. 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response) downloaded from: http:/// ! 6 :; % 3 " < ;$$ $ , $ $ 3 2 ;$$ $ = $ so-8 package outlinedimensions are shown in millimeters (inches) so-8 part marking ! " ## $% $ $ $ & downloaded from: http:/// ! 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in millimeters (inches) downloaded from: http:/// ! 7 8 9 : %;; ; 77 0-% .0&(8 < < % 777 = * %* /* qualification information ? so-8 msl1 rohs compliant yes esd machine model class q1(n) = m1a (+/- 50v) ??? , q2(p) = m1a (+/- 50v) ??? aec-q101-002 human body model class q1(n) = h0 (+/- 150v) ??? , q2(p) = h0 (+/- 150v) ??? aec-q101-001 charged device model class q1(n) = c4 (+/- 1000v) ??? , q2(p) = c4 (+/- 1000v) ??? aec-q101-005 moisture sensitivity level qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. downloaded from: http:/// ! ! "#$ % & ' # ( ) ) * ' ' % +% ' * , ' ( % , ( - . , . % ( , / 0 1 # 01# -0 0 01# ' . 01# 2 ' . ) ' -/&*-34565' "#$ . 2 ' 7 ) * # 8&& & 2 & %!%: >#? #+ @! .) (; %! ) ,5%!) downloaded from: http:/// ! " date comments 3/5/2014 ? added "logic level gate drive" bullet in the features section on page 1. ? updated data sheet with new ir corporate template. revision history downloaded from: http:/// |
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